Professor Stephen I. Long, UCSB/ECE Department

Publication List 2001 -2007

 

T. Mathew, S. Jaganathan, D. Scott, S. Krishnan, Y. Wei, M. Urteaga, M. Rodwell, S. Long, “2-bit Adder Carry and Sum Logic Circuits Clocking at 19 GHz Clock Frequency in Transferred Substrate HBT Technology,” 13th Int. Conf. On Indium Phosphide and Related Materials, Nara, Japan, Paper ThB1-5, pp. 505-509, May 2001.

 

T. Mathew, S. Jaganathan, D. Scott, S. Krishnan, Y. Wei, M. Urteaga, M. Rodwell, S. Long, “75 GHz ECL Static Frequency Divider in InAlAs/InGaAs Transferred Substrate HBT Technology,” 13th Int. Conf. On Indium Phosphide and Related Materials, Nara, Japan, Paper FA3--5, May 2001.

 

T. Mathew, H. –J. Kim, D. Scott, S. Jaganathan, S. Krishnan, Y. Wei, M. Urteaga, S. Long, and M. Rodwell,  “75 GHz ECL Static Frequency Divider using InAlAs/InGaAs HBTs,” Elect. Lett. Vol. 37 (11), pp. 667-8, May 2001.

 

M. Rodwell, M. Urteaga, T. Mathew, S. Long, et al., “Submicron Scaling of HBTs,”, IEEE Trans. On Elect. Dev, Vol. 48, pp. 2606-2624, Nov. 2001.

 

D. Choi and S. Long, “Finite DC Feed Inductor in Class E Power Amplifiers – A Simplified Approach,”  Proc. IEEE Int. Microwave Symposium, Vol. 3, pp. 1643-1646, Seattle, WA, June 2002.

 

S. Long, “Designing an RFIC CMOS Upconversion Mixer,” RF Design, pp. 54-64, March 2002.

 

V. Paidi, S. Xie, R. Coffie, U. Mishra, S. Long, M. Rodwell, “Simulations of High Linearity and High Efficiency Class B Power Amplifiers in GaN HEMT Technology,”  IEEE L. F. Eastman Conference on High Performance Devices, U. Delaware, pp. 101-107, July 2002

 

A. Long, J. Yao, S. Long, “A 13W Current Mode Class D High Efficiency 1 GHz Power Amplifier,” 45th IEEE Midwest Symposium on Circuits and Systems, pp. 33-36, August 2002

 

S. Long, “JFET Technology Transistors,” Section 55.3, Circuits and Filters Handbook, Second edition, ed. WK Chen, pp. 1540-1554, CRC Press, 2003.

 

V. Paidi, S. Xie, R. Coffie, B. Moran, S. Heikman, S. Keller, A. Chini, S. DenBaars, U. Mishra, S. Long, M. Rodwell, “High Linearity and High Efficiency of Class B Power Amplifiers in GaN HEMT Technology,” IEEE Microwave Theory and Techniques, Vol. 51, #2, pp. 643-6, Feb. 2003.

 

V. Paidi, S. Xie, R. Coffie, B. Moran, S. Heikman, S. Keller, A. Chini, S. DenBaars, U. Mishra, S. Long, M. Rodwell, “High Linearity Class B Power Amplifiers in GaN HEMT Technology,” IEEE Microwave and Wireless Components Letters, Vol. 13, #7, pp. 284-286, July 2003.

 

P. W. Lai, L. Dobos and S. Long, “A 2.4GHz SiGe Low Phase-Noise VCO Using On-Chip Tapped Inductor,” Proc. Of the 35th European Solid State Circuit Conference, ESSCIRC’03, pp. 505-508, Sept. 2003.

 

T. Collins, A. Betti-Berutto, S. Long, “A 75 GHz Current Mode Logic Static Frequency Divider Realized in a Commercially Available InP Process”, 11th European GaAs and other Compound Semiconductors Applications Symposium, European Microwave Week 2003, pp. 223-226, Munich, October 2003.

 

D. Choi and S. Long, “The Effect of Transistor Feedback Capacitance in Class E Power Amplifiers,” IEEE Trans. On Circuits and Systems I, 1556-1558, Dec. 2003.

 

S. Xie, V. Paidi, S. Heikman, A. Chini, U. Mishra, M. Rodwell, S. Long, “High linearity GaN HEMT power amplifier with pre-linearization diode,” IEEE L. F. Eastman Conference on High Performance Devices, pp. 223-228, Aug. 2004.

 

T. E. Collins, V. Manan and S. Long, “Design Analysis and Circuit Enhancements for High Speed Bipolar Flip-Flops,” IEEE J. Solid State Cir., Vol. 40, #5, pp. 1166 – 1174,  May 2005.

 

P. Lai and S. Long, “A 5GHz pHEMT Transformer-Coupled VCO,” Paper RM02B5, 2005 IEEE Radio Frequency IC (RFIC) Symposium, pp. 135-138, June 2005.

 

V. Manan and S. Long, “A Dual Band (10/16 GHz) pHEMT VCO,” European Gallium Arsenide and Other Compound Semiconductors Application Symposium, EGaAs2005, European Microwave Week 2005, pp. 261-264, Oct. 2005

 

P. Lai and S. Long, “A Low Phase Noise InGaP/GaAs HBT Transformer Power Combining VCO,” IEEE Compound Semiconductor IC Symposium, pp. 81-84, Oct. 2005.

 

H. Xu, S. Gao, S. Heikman, S. Long, U. Mishra and R. York, “A High Efficiency Class E GaN HEMT Power Amplifier at 1.9 GHz,” IEEE Microwave and Wireless Components Lett., Vol. 16, #1, pp. 22-24, Jan. 2006

 

V. Manan and S. Long, “A Low Power and Low Noise p-HEMT Ku Band VCO,” IEEE Microwave and Wireless Components Lett., Vol. 16, #3, pp. 131-133, Mar. 2006

 

T. E. Collins and S. Long, “Design of high speed bipolar flip-flops for reduced clock loading,” IEE Elect. Lett., Vol. 42, #6, pp. 329-330, 16 Mar. 2006.

 

P. Lai and S. Long, “A 5 GHz CMOS Low Phase Noise Transformer Power Combining VCO,”2006 IEEE Radio Frequency IC (RFIC) Symposium, pp. 113-116, June 2006.

 

S. Gao, C. Sanabria, H. Xu, S. I. Long, S. Heikman, U. Mishra, R. York, “MMIC Class F Power Amplifiers using Field Plated GaN HEMTs,” IEE Proc. Microwaves, Antennas, and Propagation, Vol. 153, pp. 259-262, June 2006.

 

D. Schmelzer and S. Long, “A GaN HEMT Class F Amplifier at 2 GHz with > 80% PAE,” IEEE Compound Semiconductor IC Symposium, pp. 96-99, Oct. 2006.

 

S. Long and D. Estreich, “Compound Semiconductor Integrated Circuit Technology,”, Chap. 71 – 74, in The VLSI Handbook, Second Ed., Ed. W-K. Chen, CRC Press, 2007.